Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes

Maximenko, S.; Soloviev, S.; Cherednichenko, D.; Sudarshan, T.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1576
Academic Journal
The electron-beam-induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon carbide Schottky and diffused p–n diodes. Dislocations in Schottky diodes appear as dark spots with the EBIC current signal at the dislocations reduced with respect to the background. However, in p–n diodes, the same dislocations exhibited characteristic bright halos, with the EBIC current higher than that of the background. These bright halos were attributed to a nonuniform impurity distribution around dislocations caused by the high-temperature (∼2000 °C) diffusion process. © 2004 American Institute of Physics.


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