TITLE

Thermal stability of nitrogen incorporated in HfN[sub x]O[sub y] gate dielectrics prepared by reactive sputtering

AUTHOR(S)
Kang, J.F.; Yu, H.Y.; Ren, C.; Li, M.-F.; Chan, D.S.H.; Hu, H.; Lim, H.F.; Wang, W.D.; Gui, D.; Kwong, D.-L.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1588
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report the thermal stability of nitrogen incorporated in HfO[sub x]N[sub y] gate dielectrics prepared by reactive sputtering using x-ray photoelectron spectroscopy, secondary ions mass spectrometry, and electrical characterization. The results indicate that the bulk Hf–N bonds in reactive-sputtered HfO[sub x]N[sub y] are not stable during the postdeposition annealing and can be easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. However, N at the HfO[sub x]N[sub y]/Si interface forms N–Si bonds, contributing to the excellent electrical stability of reactive sputtered HfO[sub x]N[sub y] gate dielectrics during the post deposition annealing. © 2004 American Institute of Physics.
ACCESSION #
12360938

 

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