TITLE

AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

AUTHOR(S)
Rajan, Siddharth; Huili Xing; DenBaars, Steve; Mishra, Umesh K.; Jena, Debdeep
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1591
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We discuss an AlGaN/GaN metal–semiconductor field-effect transistor (MESFET) structure grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge was created by grading the channel region linearly from GaN to Al[sub 0.3]Ga[sub 0.7]N over 1000 Å. This polarization-doped FET (PolFET) was fabricated and tested under dc and rf conditions. Current density of 850 mA/mm and transconductance of 93 mS/mm was observed under dc conditions. The 0.7 μm gate length devices had a cutoff frequency, f[sub τ]=19 GHz, and maximum oscillation frequency, f[sub max]=46 GHz. We demonstrate that the PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high power microwave applications. An important advantage of these devices over AlGaN/GaN high electron mobility transistors is that the transconductance versus gate voltage profile can be tailored by compositional grading for better large-signal linearity. © 2004 American Institute of Physics.
ACCESSION #
12360937

 

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