DNA detection on transistor arrays following mutation-specific enzymatic amplification

Pouthas, F.; Gentil, C.; Côte, D.; Bockelmann, U.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1594
Academic Journal
An integrated array of silicon field-effect transistor structures is used for electronic detection of label-free DNA. Measurements of the dc current–voltage characteristics of the transistors gives us access to reproducible detection of single- and double-stranded DNA, locally adsorbed on the surface of the device. We combine this approach with allele-specific polymerase chain reaction, to test for the 35delG mutation, a frequent mutation related to prelingual nonsyndromic deafness. © 2004 American Institute of Physics.


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