TITLE

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

AUTHOR(S)
Dey, Sandwip K.; Goswami, Jaydeb; Diefeng Gu, Jaydeb; Henk de Waard, Jaydeb; Marcus, Steve; Werkhoven, Chris
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1606
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ruthenium electrodes were selectively deposited on photoresist-patterned HfO[sub 2] surface [deposited on a SiO[sub x]/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280–320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ∼20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuO[sub x] at the Ru grain boundaries and at the DCVD–Ru/ALD–HfO[sub 2] interface. The estimated work function of DCVD–Ru on ALD–HfO[sub 2] was ∼5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance–voltage, and leakage current density at -2 V of the HfO[sub 2]/SiO[sub x] dielectric, after forming gas (95% N[sub 2]+5% H[sub 2]) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10[sup -7] A cm[sup -2], respectively. © 2004 American Institute of Physics.
ACCESSION #
12360932

 

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