TITLE

Microwave Switches Based on 4H-SiC p–i–n Diodes

AUTHOR(S)
Bludov, A. V.; Boltovets, N. S.; Vasilevskii, K. V.; Zorenko, A. V.; Zekentes, K.; Krivutsa, V. A.; Kritskaya, T. V.; Lebedev, A. A.
PUB. DATE
February 2004
SOURCE
Technical Physics Letters;Feb2004, Vol. 30 Issue 2, p123
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Problems pertaining to the modeling and development of a microwave modulator based on 4H-SiC p–i–n diodes are considered. The results of theoretical and experimental investigations of the microwave characteristics of 4H-SiC p–i–n diodes and the parameters of a microstrip modulator for a 1–10 GHz range based on these diodes are reported for the first time. In the diode switching schemes studied, the transmission losses amount to 0.8–8 dB and the decoupling is within –15 to –18 dB. The experimental characteristics of modulators are determined primarily by the parameters of diodes and agree well with the results of model calculations. © 2004 MAIK “Nauka / Interperiodica”.
ACCESSION #
12336775

 

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