A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Suski, T.; Franssen, G.; Perlin, P.; Bohdan, R.; Bercha, A.; Adamiec, P.; Dybala, F.; Trzeciakowski, W.; Prystawko, P.; Leszczyński, M.; Grzegory, I.; Porowski, S.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1236
Academic Journal
We demonstrate efficient wavelength tuning by means of hydrostatic pressure of an InGaN/GaN laser diode grown on bulk GaN crystal. Energy shifts of the emitted light with pressure have been found to be about 36 meV/GPa, which are high magnitudes for nitride-based device structures. This result is interpreted as being indicative of efficient screening of built-in electric fields in the studied device. Furthermore, the threshold current of the laser diode was found to be independent of applied pressure. The high magnitude of the pressure coefficient allowed for the achievement of a laser tuning range of up to 10 nm in the blue/violet region, using compact pressure equipment. © 2004 American Institute of Physics.


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