TITLE

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

AUTHOR(S)
Suski, T.; Franssen, G.; Perlin, P.; Bohdan, R.; Bercha, A.; Adamiec, P.; Dybala, F.; Trzeciakowski, W.; Prystawko, P.; Leszczyński, M.; Grzegory, I.; Porowski, S.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1236
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate efficient wavelength tuning by means of hydrostatic pressure of an InGaN/GaN laser diode grown on bulk GaN crystal. Energy shifts of the emitted light with pressure have been found to be about 36 meV/GPa, which are high magnitudes for nitride-based device structures. This result is interpreted as being indicative of efficient screening of built-in electric fields in the studied device. Furthermore, the threshold current of the laser diode was found to be independent of applied pressure. The high magnitude of the pressure coefficient allowed for the achievement of a laser tuning range of up to 10 nm in the blue/violet region, using compact pressure equipment. © 2004 American Institute of Physics.
ACCESSION #
12292690

 

Related Articles

  • Pressure and Temperature Tuned Semiconductor Laser Diodes. Bajda, M.; Piechal, B.; Maciejewski, G.; Trzeciakowski, W.; Majewski, J. A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p917 

    We present results of theoretical studies of the pressure and temperature tuned laser diodes (LDs) based on InGaP/AlGaInP heterostructures taking into account mounting-induced strains. Our studies reveal that mounting-induced strains play an important role in the quantitative description of...

  • Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers. Chamings, J.; Adams, A. R.; Sweeney, S. J.; Kunert, B.; Volz, K.; Stolz, W. // Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101108 

    We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ=890 nm). Temperature dependence measurements show...

  • Low threshold current density of GaInAsP visible injection laser diodes lattice matched with (100) GaAs emitting at 705 nm. Kawanishi, Hideo; Tsuchiya, Naofumi // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p37 

    Presents a study that examined the lasing wavelength and low threshold current density of GaInAsP visible injection laser diodes. Background on GaInAsP visible injection laser diode; Analysis of the lasing spectrum of oxide-striped GaInAsP visible injection laser diode under pulsed condition;...

  • Built-up of Inverted Phonon Distribution in GaN. Brazis, R.; Raguotis, R. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p149 

    Phonon distribution built-up in high electric field in cubic n-type GaN is investigated using modified Monte Carlo method. The results show that LO-phonon band population grows by many orders of magnitude in time-scale less than two femtosecond upon stepwise switched electric field, and exhibits...

  • Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers. Hossain, N.; Jin, S. R.; Liebich, S.; Zimprich, M.; Volz, K.; Kunert, B.; Stolz, W.; Sweeney, S. J. // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p011107 

    We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent...

  • Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field. Suski, T.; Łepkowski, S. P.; Staszczak, G.; Czernecki, R.; Perlin, P.; Bardyszewski, W. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p053509 

    Correlation between the photoluminescence (PL) energy at ambient pressure and the pressure coefficient of photoluminescence is studied in quantum wells (QWs) based on nitride alloys, such as InGaN/GaN, GaN/AlGaN, and GaN/InAlN, grown along the polar direction [0001] of the wurtzite structure....

  • Hydrostatic Pressure and Built-In Electric Field Effects on the Donor Impurity States in Cylindrical Wurtzite GaN/Al x Ga1−x N Quantum Rings. Wang, Guangxin; Duan, Xiuzhi; Zhou, Rui // Advances in Condensed Matter Physics;2/19/2015, Vol. 2015, p1 

    Within the framework of the effective mass approximation, the ground-state binding energy of a hydrogenic impurity is investigated in cylindrical wurtzite GaN/AlxGa1-xN strained quantum ring (QR) by means of a variational approach, considering the influence of the applied hydrostatic pressure...

  • Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices. Liu, Y.; Kauser, M. Z.; Schroepfer, D. D.; Ruden, P. P.; Xie, J.; Moon, Y. T.; Onojima, N.; Morkoç, H.; Son, K.-A.; Nathan, M. I. // Journal of Applied Physics;6/1/2006, Vol. 99 Issue 11, p113706 

    The current-voltage characteristics of n-GaN/u-AlGaN/n-GaN heterostructure devices are investigated for potential pressure sensor applications. Model calculations suggest that the current decreases with pressure as a result of the piezoelectric effect, and this effect becomes more significant...

  • Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range. Adamiec, P.; Salhi, A.; Bohdan, R.; Bercha, A.; Dybala, F.; Trzeciakowski, W.; Rouillard, Y.; Joullié, A. // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4292 

    InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar, the threshold current varied from 240 to 400 A/cm2, showing a minimum of 200 A/cm2 close...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics