High quantum efficiency AlGaN solar-blind p-i-n photodiodes

McClintock, R.; Yasan, A.; Mayes, K.; Shiell, D.; Darvish, S.R.; Kung, P.; Razeghi, M.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1248
Academic Journal
We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al[sub 0.87]Ga[sub 0.13]N/AlN superlattice material and a highly conductive Si–In co-doped Al[sub 0.5]Ga[sub 0.5]N layer. © 2004 American Institute of Physics.


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