Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

Mirin, Richard P.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1260
Academic Journal
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g[sup (2)](0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g[sup (2)](0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g[sup (2)](0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.


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