Development of high-operating-temperature infrared detectors with gold-doped Hg[sub 0.70]Cd[sub 0.30]Te

Shih, H.D.; Kinch, M.A.; Aqariden, F.; Liao, P.K.; Dreiske, P.D.; Ohlson, M.J.; Orent, T.W.; Robinson, J.E.; Schaake, H.F.; Teherani, T.H.; Kalma, A.H.; Roush, F.M.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1263
Academic Journal
Excellent high-operating-temperature infrared photodiodes in the medium-wavelength infrared spectral band with cutoff wavelengths ∼5 μm at 77 K were fabricated on Hg[sub 1-x]Cd[sub x]Te samples (x∼0.30) prepared by liquid-phase epitaxy in a tellurium-melt reactor. The samples were doped with indium to ∼1×10[sup 14] cm[sup -3] and gold to ∼5×10[sup 15] cm[sup -3]. Thick planar diodes (∼80 μm thick) and thin cylindrical diodes (∼10 μm thick) of the n-on-p type were fabricated, and they gave comparable, excellent detector dark values within a factor of two. At 130 K, dark currents as low as 5×10[sup -7] A/cm[sup 2] were obtained. © 2004 American Institute of Physics.


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