TITLE

Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition

AUTHOR(S)
Kusumori, Takeshi; Muto, Hachizo; Brito, Manuel E.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1272
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Control of silicon carbide (SiC) polytype formation has been achieved. 3C, 2H, and 4H SiC heteroepitaxial films are fabricated on a sapphire (0001) substrate at a low temperature of 1100 °C using a pulsed-laser deposition (PLD) method. Images made by transmission electron microscopy clearly show that each film consists of a single polytype. The polytype of the SiC films can be changed by varying just two easily controlled parameters: the laser pulse frequency and the substrate temperature. These results suggest that precise control of growth conditions, which is essential for polymorphic materials, is possible using the PLD method. © 2004 American Institute of Physics.
ACCESSION #
12292678

 

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