Band-gap renormalization in highly excited GaN

Nagai, Takehiko; Inagaki, Takeshi J.; Kanemitsu, Yoshihiko
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1284
Academic Journal
We have studied the band-gap renormalization in highly excited GaN thin films by means of photoluminescence (PL) spectral measurements from 6 to 300 K. The renormalized band-gap energy is determined from the low-energy edge of the broad PL band due to the high-density electron and hole (e–h) plasmas. The reduction of the band-gap energy depends on the density of e–h plasmas, but is independent of temperature. The renormalized band-gap energy is calculated using two theoretical models. Our results suggest that the e–h pair correlation plays an essential role in highly excited GaN. © 2004 American Institute of Physics.


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