TITLE

Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO[sub 2] superlattice by excimer laser irradiation

AUTHOR(S)
Daigil Cha, R.; Shin, Jung H.; In-Hyuk Song; Min-Koo Han
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1287
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of excimer laser annealing on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/SiO[sub 2] superlattice is investigated. An amorphous Si/SiO[sub 2] superlattice consisting of 20 periods of 2 nm thin Si layers and 5 nm thin SiO[sub 2] layers was deposited on Si using electron cyclotron resonance plasma-enhanced chemical vapor deposition. Excimer laser annealing alone did not result in any nc-Si luminescence even at an energy density sufficient to melt the Si layers. However, if the nc-Si is preformed by a thermal anneal, subsequent excimer laser annealing will result in a threefold increase of the nc-Si luminescence intensity. The temperature dependence of the nc-Si luminescence spectrum, lifetime, and intensity indicates that excimer laser annealing activates luminescent nc-Si by removing defects and amorphous regions in thermally crystallized Si layers without significant changes in the size or shape of nc-Si. © 2004 American Institute of Physics.
ACCESSION #
12292673

 

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