Observation of spontaneous ordering in the optoelectronic material GaInNP

Su, Y.K.; Wu, C.H.; Hsu, S.H.; Chang, S.J.; Chen, W.C.; Huang, Y.S.; Hsu, H.P.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1299
Academic Journal
We report a detailed structural and optical characterization of high-quality GaInNP films. These films were grown by gas-source molecular-beam epitaxy on GaAs (100) substrates. These epitaxial layers were then characterized by a high-resolution x-ray rocking curve (HRXRC) and photoluminescence (PL) measurements. With nitrogen incorporation, the PL peak redshifts, indicating bandgap reduction and the line-width broadening increases due to alloy scattering. The anisotropic properties of the polarized HRXRC and polarized piezoreflectance spectra are used to prove the spontaneous ordering in GaInP incorporating nitrogen. Furthermore, ordering-induced superlattice-like microstructure shown in high-resolution transmission electron microscope images is used to confirm the spontaneous ordering in Ga[sub 0.44]In[sub 0.56]N[sub x]P[sub 1-x] epitaxial layers. © 2004 American Institute of Physics.


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