TITLE

Chemical structure of the interface in ultrathin HfO[sub 2]/Si films

AUTHOR(S)
Jong-Cheol Lee; Oh, S.-J.; Moonju Cho, S.-J.; Cheol Seong Hwang; Ranju Jung
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The chemical states of the HfO[sub 2]/Si (100) interface were investigated using transmission electron microscopy and high-resolution x-ray photoelectron spectroscopy. The depth distributions of Hf chemical states showed that the Hf 4f binding energy remains unchanged with the depth and there is no signature of more than one Hf-O state. These facts strongly suggest that the chemical state of the interfacial layer is not Hf-silicate, as previously believed. Instead, the compositions are mainly Si[sub 2]O[sub 3] and SiO[sub 2], judging from the deconvolution of Si 2p spectra. The dielectric constant κ=4.8 of the interfacial layer is also consistent with the above conclusions. © 2004 American Institute of Physics.
ACCESSION #
12292667

 

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