Direct measurement of trapped and free charge distributions in semiconductors

Holé, Stéphane; Lewiner, Jacques
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1308
Academic Journal
The nonuniform distribution of charges in semiconductors is of direct influence on their behavior. It is therefore of great interest to estimate these distributions in order to optimize semiconductor structures and designs. Until now only indirect methods have been used which require the application of a bias voltage. We show, that it should be possible to perform direct measurements of the distribution of trapped charges and of mobile carriers in semiconductors independently to the biasing conditions. Theoretical developments and experimental results are shown. © 2004 American Institute of Physics.


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