Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN

Thaler, G.; Frazier, R.; Gila, B.; Stapleton, J.; Davidson, Mark; Abernathy, C.R.; Pearton, S.J.; Segre, Carlos
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1314
Academic Journal
The room temperature magnetization of GaMnN films grown by molecular beam epitaxy on (0001) sapphire substrates with Mn concentrations varying from 0 to 9 at. % was found to depend on Mn concentration, with a maximum magnetization found at ∼3 at. % Mn. High-resolution x-ray diffraction measurements show that the c-plane lattice constant initially decreases with increasing Mn concentration, then increases when the Mn content increases above ∼3 at. %. This increase is accompanied by a decrease in the full width at half maximum of the rocking curves. Extended x-ray absorption fine structure results indicate that the nonsubstitutional Mn is not present in the form of Ga[sub x]Mn[sub y] clusters and thus is most likely present in the form of an interstitial. Optical absorption measurements show only a slight increase in the band gap for material with 3 at. % Mn, relative to undoped GaN. © 2004 American Institute of Physics.


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