TITLE

Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN

AUTHOR(S)
Thaler, G.; Frazier, R.; Gila, B.; Stapleton, J.; Davidson, Mark; Abernathy, C.R.; Pearton, S.J.; Segre, Carlos
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1314
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The room temperature magnetization of GaMnN films grown by molecular beam epitaxy on (0001) sapphire substrates with Mn concentrations varying from 0 to 9 at. % was found to depend on Mn concentration, with a maximum magnetization found at ∼3 at. % Mn. High-resolution x-ray diffraction measurements show that the c-plane lattice constant initially decreases with increasing Mn concentration, then increases when the Mn content increases above ∼3 at. %. This increase is accompanied by a decrease in the full width at half maximum of the rocking curves. Extended x-ray absorption fine structure results indicate that the nonsubstitutional Mn is not present in the form of Ga[sub x]Mn[sub y] clusters and thus is most likely present in the form of an interstitial. Optical absorption measurements show only a slight increase in the band gap for material with 3 at. % Mn, relative to undoped GaN. © 2004 American Institute of Physics.
ACCESSION #
12292664

 

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