Current quantization due to single-electron transfer in Si-wire charge-coupled devices

Fujiwara, Akira; Zimmerman, Neil M.; Ono, Yukinori; Takahashi, Yasuo
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1323
Academic Journal
We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under the fine gates with phase-shifted pulse voltages, quantized numbers of electrons are injected into and extracted from the charge island sandwiched by the two barriers. Current plateaus due to single-electron transfer are clearly observed at 20 K with frequencies up to 100 MHz and a current level of 16 pA. © 2004 American Institute of Physics.


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