Surface relaxation in ion-etch nanopatterning

Stepanova, M.; Dew, S.K.
February 2004
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1374
Academic Journal
By the means of an atomistic simulation, we investigate the influence of surface mobility on the morphology of surfaces during ion-beam etching at oblique incidence. Depending on the level of surface mobility, three different kinds of etch ripples self-organize in our simulation. For surface scaling, we observe two different regimes. The average height of ripples increases during etching or saturates depending on the surface mobility. The average interripple distance scales with the expression &radix;Deff/ν, where ν is the surface tension and Deff is an effective transport coefficient proportional to the frequency of irreversible relaxation jumps at the surface.


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