TITLE

Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films

AUTHOR(S)
Wang, Q.; Ekerdt, J.G.; Gay, D.; Sun, Y.-M.; White, J.M.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1380
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermal chemical vapor deposition at temperatures as low as 423 K, using Ru[sub 3](CO)[sub 12] with no accompanying reactive gas, forms pure, uniform, and smooth Ru films on Ta and low-resistivity films on SiO[sub 2]. A 2.5-nm-thick Ru film fully covers the underlying Ta and the Ru film is thermally stable up to 573 K. Unlike Ta, Ru films exhibit excellent wetting by Cu even when the Ru surface is contaminated with small amounts of oxygen. © 2004 American Institute of Physics.
ACCESSION #
12292642

 

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