TITLE

Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

AUTHOR(S)
Das, K.; NandaGoswami, M.; Mahapatra, R.; Kar, G.S.; Dhar, A.; Acharya, H.N.; Maikap, S.; Je-Hun Lee; Ray, S.K.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1386
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-oxide-semiconductor capacitors with a trilayer structure consisting of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide were fabricated on p-Si substrates. The trilayer structures were rapid thermal annealed at 1000 °C in nitrogen atmosphere for different durations. Cross-sectional transmission electron micrographs revealed the complete isolation of Ge nanocrystals in the sandwiched structure annealed for a longer duration. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements, respectively. Under optimized annealing conditions, an enhancement of the charge storage capability of nanocrystals was observed in agreement with the optical emission characteristics. © 2004 American Institute of Physics.
ACCESSION #
12292640

 

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