TITLE

Nanometrics Combines Ellipsometry, Reflectrometry

PUB. DATE
September 2003
SOURCE
Electronic News;9/8/2003, Vol. 49 Issue 36, pN.PAG
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
Deals with the integrated metrology tool unveiled by Nanometrics Inc. in September 2003 combining ultraviolet spectroscopic ellipsometry and deep ultraviolet (DUV) spectroscopic reflectometry. Range of applications for the combined metrology capability of the tool; Benefits of the DUV technology in the dielectric chemical mechanical planarization process; Features of the NanoOCD/DUV 9010 tool.
ACCESSION #
12240626

 

Related Articles

  • Close scrutiny for thin films thanks to innovate encoders.  // Machine Design;12/11/2003, Vol. 75 Issue 23, p48 

    Provides information on the NanoOCD/DUV 9010, a metrology device from Nanometrics Inc. that can combine ultraviolet (UV) optical critical dimension spectroscopic ellipsometry and deep UV-spectroscopic reflectometry. Features of the device; Description of the tool's custom design.

  • Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials). Edwards, N.V. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p723 

    The recent commercialization of Vacuum Ultraviolet spectroscopic ellipsometry (VUV SE) instruments means that it is now possible to routinely perform SE measurements at wavelengths below 190 nm. This new capability has obvious implications for lithographic work but also for the characterization...

  • Nanometrics unveils photoluminescence mapping system.  // Test & Measurement World;Nov2006, Vol. 26 Issue 10, p56 

    The article evaluates the VerteX rapid photoluminescence mapping system from Nanometrics Inc.

  • Ellipsometry goes spectroscopic, opening up new research... Chase, Victor // R&D Magazine;Feb96, Vol. 38 Issue 2, p37 

    Reports on the division of ellipsometers polarized light, into two components. Invention of the spectroscopic ellipsometer; Analyzing material layers; Comments from scientist, Tom Allen; Features of the ellipsometer.

  • Characterizing resists and films with VUV spectroscopic ellipsometry. Boher, Pierre; Evrard, Patrick; Piel, Jean Philippe; Defranoux, Christophe; Stehle, Jean Louis // Solid State Technology;Jul2001, Vol. 44 Issue 7, p165 

    Describes the characteristics of thin films and multilayers in semiconductor manufacturing using vacuum ultraviolet (VUV) spectroscopic ellipsometry. Advantages of ellipsometry; Capabilities of VUV SE in characterizing photoresists and antireflective coatings.

  • Optical Properties of Jet-Vapor-Deposited TiAlO and HfAlO Determined by Vacuum Utraviolet Spectroscopic Ellipsometry. Nguyen, N.V.; Jin-Ping Han; Jin Yong Kim, N.V.; Wilcox, Eva; Yong Jai Cho, Eva; Wenjuan Zhu; Zhijiong Luo; Ma, T.P. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p181 

    In this report we use vacuum ultraviolet spectroscopic ellipsometry (VUV-SE) to determine the optical as well as structural properties of high-k metal oxides, in particular, of hafnium aluminates and titanium aluminates grown by jet-vapor deposition. In our opinion, the adapted approach employed...

  • Optical properties of silicon oxynitride thin films determined by vacuum ultraviolet spectroscopic ellipsometry. Hyun Jong Kim, N.; Yong Jai Cho, N.; Hyun Mo Cho, N.; Sang Youl Kim; Changsun Moon, N.; Gyungsu Cho, N.; Youngmin Kwon, N. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p171 

    We determined the optical constants of silicon oxynitride (SiOxNy) thin films using a vacuum ultraviolet spectroscopic ellipsometer. The SiOxNy layers with a nominal thickness of 25 nm ∼ 35 nm were grown on silicon substrates by using plasma enhanced chemical vapor deposition (PECVD). The...

  • High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection. Boher, P.; Evrard, P.; Piel, J.P.; Defranoux, C.; Fouere, J.C.; Bellandi, E.; Bender, H. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p148 

    In this study, we use vacuum UV spectroscopic ellipsometry (VUVSE) to characterize new high dielectric materials. Indeed, all the candidates for high k dielectrics become strongly absorbent when the wavelength is reduced down to 140nm. So, the correlation between thickness and refractive index...

  • Nanometrics Unveils Mask Metrology System.  // Electronic News;9/13/2004, Vol. 50 Issue 37, pN.PAG 

    Features the Atlas-M High Performance Mask Metrology System that can provide measurements in a single tool developed by Nanometrics Inc. Capabilities of the system; Overview of the standard mechanical interface of the system; Information on Nanometrics' N2000 Analysis Platform software.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics