TITLE

High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

AUTHOR(S)
Mayes, K.; Yasan, A.; McClintock, R.; Shiell, D.; Darvish, S.R.; Kung, P.; Razeghi, M.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1046
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm×300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. © 2004 American Institute of Physics.
ACCESSION #
12202353

 

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