TITLE

Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

AUTHOR(S)
Ukhanov, A.A.; Stintz, A.; Eliseev, P.G.; Malloy, K.J.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1058
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spectral dependence of the modal gain and linewidth enhancement factor is measured in an InAs/GaInAs/AlGaAs/GaAs quantum dot (QD) laser and a GaInAs/AlGaAs/GaAs quantum well laser of the same design lacking only the quantum dots. The material differential gain and material differential carrier induced refractive index are found to be about three times smaller in the quantum dot laser than in the quantum well laser. The linewidth enhancement factor is smaller in the QD laser and exhibits considerably less dispersion. © 2004 American Institute of Physics.
ACCESSION #
12202349

 

Related Articles

  • Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states. Uskov, A.V.; O'Reilly, E.P.; McPeake, D.; Ledentsov, N.N.; Bimberg, D.; Huyet, G. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p272 

    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth...

  • Fundamental Effects in the Dependence of the 1/f Noise Spectrum on the Bias Current in Semiconductor Diodes. Yakimov, A. V. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p347 

    Relation by Kleinpenning for 1/f noise in p-n junction is used for all types of semiconductor diodes up to now. It is applied to some diodes with quantum dots and wells but only within restricted range of bias current, and not for all types of diodes, see, e.g.. Possible noise sources in...

  • Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers. Klopf, F.; Reithmaier, J. P.; Reithmaier, J.P.; Forchel, A. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    Highly efficient 980 nm GaInAs/(Al)GaAs quantum-dot (QD) and quantum-well (QW) lasers based on a single active layer have been fabricated and compared in view of high-power applications. QD lasers show a significantly reduced temperature shift of the emission wavelength and achieve external...

  • Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers. Klopf, F.; Deubert, S.; Reithmaier, J. P.; Forchel, A. // Applied Physics Letters;7/8/2002, Vol. 81 Issue 2, p217 

    The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GalnAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using...

  • Complete suppression of filamentation and superior beam quality in quantum-dot lasers. Ribbat, Ch.; Sellin, R. L.; Kaiander, I.; Hopfer, F.; Ledentsov, N. N.; Bimberg, D.; Kovsh, A. R.; Ustinov, V. M.; Zhukov, A. E.; Maximov, M. V. // Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p952 

    Comparative near-field and beam-quality (M²) measurements on narrow stripe quantum-dot (QD) and quantum-well (QW) lasers of identical structure, both emitting at 1100 nm, are presented. Intrinsic suppression of filamentation in the QD lasers is observed. QD lasers emitting at 1300 nm again...

  • Experimental and theoretical study of the facet phase influence on the wavelength shift in.... Hillmer, H.; Hansmann, S.; Walter, H.; Burkhard, H. // Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p698 

    Examines the physical laser parameters of InGaAs/InAlGaAs quantum well (QW) structures. Physical laser parameters; Comparison of refractive indices between experimental and theoretical data; Applicability of the laser system.

  • Tunnel current in quantum dot infrared photodetectors. Duboz, J.-Y.; Liu, H. C.; Wasilewski, Z. R.; Byloss, M.; Dudek, R. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p1320 

    Infrared photodetectors have been fabricated based on InAs/GaAs self-assembled quantum dot (QD) layers, with various QD densities and doping levels. Dark currents have been measured as a function of applied bias and temperature. They show a clear activation energy, which decreases as the QD...

  • Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers. Zhukov, A.; Savelyev, A.; Maximov, M.; Shernyakov, Yu.; Arakcheeva, E.; Zubov, F.; Krasivichev, A.; Kryzhanovskaya, N. // Semiconductors;Feb2012, Vol. 46 Issue 2, p225 

    An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition...

  • Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser. Walter, G.; Chung, T.; Holonyak, N. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3045 

    Data are presented on the coupled-stripe laser operation (continuous wave, 300 K) of a single InAs quantum-dot (QD) layer coupled via a thin (5 Å) GaAs barrier to an auxiliary strained InGaAs quantum well (QW) grown (confined) in an AlGaAs–GaAs heterostructure. Because of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics