TITLE

Electroluminescent properties of erbium-doped III–N light-emitting diodes

AUTHOR(S)
Zavada, J.M.; Jin, S.X.; Nepal, N.; Lin, J.Y.; Jiang, H.X.; Chow, P.; Hertog, B.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1061
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the synthesis of Er-doped III–N double heterostructure light-emitting diodes (LEDs) and their electroluminescence (EL) properties. The device structures were grown through a combination of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) on c-plane sapphire substrates. The AlGaN layers, with an Al concentration of ∼12%, were prepared by MOCVD and doped with Si or Mg to achieve n- and p-type conductivity, respectively. The Er+O-doped GaN active region was grown by MBE and had a thickness of 50 nm. The Er concentration was estimated to be ∼10[sup 18] cm[sup -3]. The multilayer n-AlGaN/GaN:Er/p-AlGaN structures were processed into LEDs using standard etching and contacting methods. Several different LEDs were produced and EL spectra were recorded with both forward and reverse bias conditions. Typically, the EL under reverse bias was five to ten times more intense than that under forward bias. The LEDs displayed a number of narrow emission lines representative of the GaN:Er system (green: 539 nm, 559 nm; infrared: 1000 nm, 1530 nm). While some current crowding was observed, green emission was visible under ambient room conditions at 300 K. At cryogenic temperatures, the emission lines increased in intensity and had a narrower linewidth. EL spectra were recorded down to 10 K and the L-I characteristics were systematically measured. The power output of the brightest LEDs was approximately 2.5 W/m2 at 300 K. © 2004 American Institute of Physics.
ACCESSION #
12202348

 

Related Articles

  • Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates. Egawa, T.; Jimbo, T.; Umeno, M. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5816 

    Discusses the characteristics and degradation of an InGaN/AlGaN double-heterostructure light-emitting diode. Metalorganic chemical vapor deposition on a sapphire substrate; Electrical and optical degradations under high injected current density and high ambient temperature; Observations of...

  • p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas. Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang; Wei Sun, Xiao; Volkan Demir, Hilmi // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p263501 

    Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by...

  • Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template. Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi // Journal of Applied Physics;3/15/2004, Vol. 95 Issue 6, p3170 

    InGaN multiple-quantum-well light-emitting diodes (LEDs) were grown on an AlN/sapphire template by metalorganic chemical vapor deposition. The crystalline quality was investigated by x-ray diffraction and electron-beam-induced current. The thermal stability of the LED was demonstrated by...

  • Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition. Zhang, L.; Wei, X. C.; Liu, N. X.; Lu, H. X.; Zeng, J. P.; Wang, J. X.; Zeng, Y. P.; Li, J. M. // Applied Physics Letters;6/13/2011, Vol. 98 Issue 24, p241111 

    Our simulated results [Appl. Phys. Lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (LEDs) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. In this letter, in order to...

  • 1.54 μm emitters based on erbium doped InGaN p-i-n junctions. Dahal, R.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M. // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141109 

    We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μm2 mesa devices. The...

  • 2000 h stable operation in 0.87 microm light-emitting diode using stress-free InGaP/GaAs/Si. Egawa, T.; Jimbo, T. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3605 

    Develops an Al-free reliable 877 nanometer In[sub0.49]Ga[sub0.51]P/GaAs light emitting diodes (LED) on Si substrates by metalorganic chemical vapor deposition. Effects of dark line defects (DLD) on the conventional Al-containing Al[sub0.3]Ga[sub0.7]As/GaAs LED on silicon substrates; Factor...

  • Blue to deep UV light emission from a p-Si/AlN/Au heterostructure. Zhao, J. L.; Tan, S. T.; Iwan, S.; Sun, X. W.; Liu, W.; Chua, S. J. // Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG 

    Undoped AlN thin film has been grown on p-Si (111) by metal-organic chemical-vapor deposition. The p-Si/AlN/Au heterostructured light-emitting diode was further fabricated and investigated. The current-voltage characteristic showed a typical back-to-back diode behavior, which is responsible for...

  • Vibrational spectroscopy of arsenic-hydrogen complexes in ZnSe. McCluskey, M.D.; Haller, E.E. // Applied Physics Letters;6/10/1996, Vol. 68 Issue 24, p3476 

    Examines the hydrogen local vibrational modes in arsenic doped zinc selenide diodes grown by chemical vapor deposition using infrared absorption spectroscopy. Reason using the absorption peak level with hydrogen as a carrier gas; Effect of deuterium substitution of hydrogen as carrier gas;...

  • GaN microrods on graphene substrates enable bendable optoelectronics devices.  // MRS Bulletin;Dec2014, Vol. 39 Issue 12, p1037 

    The article discusses the study conducted by Gyu-Chul Yi and colleagues regarding the use of gallium nitride (GaN) microrods in graphene substrates to create bendable light emitting diode (LED) and optoelectronic devices. Topics discussed include the use of metal-organic chemical vapor...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics