Electroluminescent properties of erbium-doped III–N light-emitting diodes

Zavada, J.M.; Jin, S.X.; Nepal, N.; Lin, J.Y.; Jiang, H.X.; Chow, P.; Hertog, B.
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1061
Academic Journal
We report on the synthesis of Er-doped III–N double heterostructure light-emitting diodes (LEDs) and their electroluminescence (EL) properties. The device structures were grown through a combination of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) on c-plane sapphire substrates. The AlGaN layers, with an Al concentration of ∼12%, were prepared by MOCVD and doped with Si or Mg to achieve n- and p-type conductivity, respectively. The Er+O-doped GaN active region was grown by MBE and had a thickness of 50 nm. The Er concentration was estimated to be ∼10[sup 18] cm[sup -3]. The multilayer n-AlGaN/GaN:Er/p-AlGaN structures were processed into LEDs using standard etching and contacting methods. Several different LEDs were produced and EL spectra were recorded with both forward and reverse bias conditions. Typically, the EL under reverse bias was five to ten times more intense than that under forward bias. The LEDs displayed a number of narrow emission lines representative of the GaN:Er system (green: 539 nm, 559 nm; infrared: 1000 nm, 1530 nm). While some current crowding was observed, green emission was visible under ambient room conditions at 300 K. At cryogenic temperatures, the emission lines increased in intensity and had a narrower linewidth. EL spectra were recorded down to 10 K and the L-I characteristics were systematically measured. The power output of the brightest LEDs was approximately 2.5 W/m2 at 300 K. © 2004 American Institute of Physics.


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