Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation

Lynch, C.; Chason, E.; Beresford, R.; Hong, S.K.
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1085
Academic Journal
We present results showing that the strain relaxation rate in heteroepitaxial layers depends strongly on the presence of the growth flux. These results are based on real-time stress measurements made during molecular beam epitaxy of In[sub x]Ga[sub 1-x]As/GaAs (x=0.16±0.01) films grown at 452, 477, and 502 °C. Our measurements indicate that the increased relaxation rate during growth is due to an enhancement in the dislocation glide velocity. We propose a model for the dislocation velocity increase in which the growth-induced supersaturation of adatoms lowers the barrier to single kink nucleation. © 2004 American Institute of Physics.


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