Optical properties of the nitrogen vacancy in AlN epilayers

Nepal, N.; Nam, K.B.; Nakarmi, M.L.; Lin, J.Y.; Jiang, H.X.; Zavada, J.M.; Wilson, R.G.
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1090
Academic Journal
AlN epilayers grown by metalorganic chemical vapor deposition were implanted with cobalt ions and studied by deep UV photoluminescence (PL). A PL emission peak at 5.87 eV (at 10 K) was observed for the Co-implanted AlN epilayers, which was absent in as-grown AlN epilayers. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The 5.87 eV emission line is believed due to a band-to-impurity transition involving the nitrogen vacancy (V[sub N]) in ion-implanted AlN. The experimentally determined energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. From the band-to-impurity transition involving V[sub N], we have deduced the energy band gap of AlN to be 6.13 eV, which is consistent with our previous result. Our results suggest that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy. © 2004 American Institute of Physics.


Related Articles

  • Photoluminescence properties of N-implanted Al0.30Ga0.70As0.62P0.38 alloy grown on GaAs0.61P0.39 substrates. Chen, Chyuan-Wei; Wu, Meng-Chyi // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p123 

    Presents a study on the photoluminescence properties of nitrogen-implanted AlGaAsP alloy grown on GaAsP substrates. Recommended method for introducing nitrogen impurities with precise doping concentration and depth profile; Effect induced by isoelectronic substituents; Effectiveness of ion...

  • Emission properties of an amorphous AlN:Cr[sup 3+] thin-film phosphor. Caldwell, M. L.; Martin, A. L.; Dimitrova, V. I.; Van Patten, P. G.; Kordesch, M. E.; Richardson, H. H. // Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1246 

    Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10[sup -4] Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ∼1300 K for 30 min in a nitrogen...

  • Electronic structure of aluminum nitride: Theory and experiment. Loughin, S.; French, R.H.; Ching, W.Y.; Xu, Y.N.; Slack, G.A. // Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1182 

    Presents a vacuum ultraviolet study of single crystal and polycrystalline aluminum nitride (AlN). Comparison between the result of vacuum ultraviolet study and the theoretical optical properties; Electronic structure of AlN; Features of the centers of the two sets of two dimensional critical...

  • Intense ultraviolet cathodoluminescence at 318 nm from Gd[sup 3+]-doped AlN. Vetter, Ulrich; Zenneck, Jan; Hofsäss, Hans // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2145 

    We present investigations of Gd-implanted aluminum nitride, studied with cathodoluminescence (CL) as well as time-resolved CL in the temperature range 12–300 K. Luminescence due to intra-4f electron transitions of Gd[sup 3+] is dominated by the [sup 6]P[sub 7/2]→[sup 8]S[sub 7/2]...

  • Photoluminescence and ultraviolet laser emission from nanocrystalline ZnO thin films. Mitra, Anirban; Thareja, R. K. // Journal of Applied Physics;2/15/2001, Vol. 89 Issue 4, p2025 

    We report on photoluminescence and ultraviolet laser emission from ZnO pellets and thin films of ZnO. Laser emission from disordered polycrystalline thin films and pellets was observed in all directions. ZnO films were deposited on glass substrate at room temperature in various ambient gas...

  • Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions. Chichibu, S. F.; Hazu, K.; Onuma, T.; Uedono, A. // Applied Physics Letters;8/1/2011, Vol. 99 Issue 5, p051902 

    Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (Ï„R) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or...

  • High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors. Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;11/5/2012, Vol. 101 Issue 19, p192106 

    High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN...

  • Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate. Prinz, G.i M.; Ladenburger, A.; Schirra, M.; Feneberg, M.; Thonke, K.; Sauer, R.; Taniyasu, Y.; Kasu, M.; Makimoto, T. // Journal of Applied Physics;1/15/2007, Vol. 101 Issue 2, p023511 

    Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance...

  • Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths. Stegmaier, M.; Ebert, J.; Meckbach, J. M.; Ilin, K.; Siegel, M.; Pernice, W. H. P. // Applied Physics Letters;3/3/2014, Vol. 104 Issue 9, p1 

    Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics