Elastic strain relaxation in free-standing SiGe/Si structures

Mooney, P.M.; Cohen, G.M.; Chu, J.O.; Murray, C.E.
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1093
Academic Journal
We have investigated elastic strain relaxation, i.e., strain relaxation without the introduction of dislocations or other defects, in free-standing SiGe/Si structures. We fabricated free-standing Si layers supported at a single point by an SiO[sub 2] pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model for strain sharing between the SiGe and strained Si layers. We report strained Si layers with biaxial tensile strain equal to 0.007 and 0.012. © 2004 American Institute of Physics.


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