TITLE

Elastic strain relaxation in free-standing SiGe/Si structures

AUTHOR(S)
Mooney, P.M.; Cohen, G.M.; Chu, J.O.; Murray, C.E.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated elastic strain relaxation, i.e., strain relaxation without the introduction of dislocations or other defects, in free-standing SiGe/Si structures. We fabricated free-standing Si layers supported at a single point by an SiO[sub 2] pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model for strain sharing between the SiGe and strained Si layers. We report strained Si layers with biaxial tensile strain equal to 0.007 and 0.012. © 2004 American Institute of Physics.
ACCESSION #
12202337

 

Related Articles

  • Growth of Ge[sub x]Si[sub 1-x] alloys on Si(110) surfaces. Hull, R.; Bean, J.C.; Peticolas, L.; Bahnck, D. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p964 

    Examines the epitaxial growth of Ge[sub x]Si[sub 1-x] alloys on Si(110) surfaces. Production of orthothrombic unit cell following strain relaxation; Shift of the misfit dislocation critical thickness; Nature of the stress relief via misfit dislocations.

  • Atomistic analysis of strain relaxation in [formula]-oriented biaxially strained ultrathin copper films. Kolluri, Kedarnath; Gungor, M. Rauf; Maroudas, Dimitrios // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p103519 

    Results are reported of a systematic atomic-scale computational analysis of strain relaxation mechanisms and the associated defect dynamics in nanometer-scale thin or ultrathin Cu films that are subjected to a broad range of biaxial tensile strains. The films contain pre-existing voids and the...

  • Mechanism of strain hardening and dislocation-structure formation in metals subjected to severe plastic deformation. Malygin, G. // Physics of the Solid State;Apr2006, Vol. 48 Issue 4, p693 

    The equations of dislocation kinetics are used to theoretically analyze the mechanism of strain hardening and the formation of fragmented dislocation structures in metals at large plastic strains. A quantitative analysis of the available data on aluminum and an aluminum-magnesium alloy shows...

  • Interface and defect structures of Zn–ZnO core–shell heteronanobelts. Ding, Y.; Kong, X.Y.; Wang, Z.L. // Journal of Applied Physics;1/1/2004, Vol. 95 Issue 1, p306 

    Interface and defect structures of Zn–ZnO core–shell nanobelts have been investigated using high-resolution transmission electron microscopy. Most of the nanobelts can be classified into two types from their growth directions: [2110] and [0001], with the top/bottom surfaces being...

  • Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation. Lynch, C.; Chason, E.; Beresford, R.; Hong, S.K. // Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1085 

    We present results showing that the strain relaxation rate in heteroepitaxial layers depends strongly on the presence of the growth flux. These results are based on real-time stress measurements made during molecular beam epitaxy of In[sub x]Ga[sub 1-x]As/GaAs (x=0.16±0.01) films grown at...

  • Materials genomics of thin film strain relaxation by misfit dislocations. Hull, R.; Parvaneh, H.; Andersen, D.; Bean, John C. // Journal of Applied Physics;2015, Vol. 118 Issue 22, p225306-1 

    We summarize the development and implementation of a "process simulator" for modeling thin film strain relaxation by injection of misfit dislocations. The process simulator, initially developed for GexSi1–x/Si(100) lattice-mismatched epitaxy, integrates elasticity and dislocation theory...

  • Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted... Pan, G.Z.; Tu, K.N.; Prussin, A. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p78 

    Studies the end-or-range dislocation loops in silicon-implanted silicon. Performance of two kinds of post-implantation anneals; Observation of the ripening of faulted Frank dislocation and perfect prismatic dislocation loops; Distribution profiles of the loops; Analysis of the ripening behavior...

  • Dislocation dynamics near film edges and corners in silicon. Schwarz, K.W.; Chidambarrao, D. // Journal of Applied Physics;5/15/1999, Vol. 85 Issue 10, p7198 

    Investigates the effect of film edge and corner stress fields on the behavior of dislocations in silicon. Computational methods; Qualitative analysis of nucleation; Conclusions.

  • Dislocation defect based model analysis for the pre-breakdown reverse characteristics of 4H-SiC p... Zheng, L.; Joshi, R.P. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7935 

    Analyzes the model of the reverse characteristics of 4H-silicon carbide diodes in the pre-breakdown regime to probe the physics and qualitative trends arising from the presence of dislocations and traps in the material. Description of the defect based model; Results and discussion of results;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics