Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

Jeong Min Baik; Yoon Shon, S.J.; Tae Won Kang, S.J.; Jong-Lam Lee
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1120
Academic Journal
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700–900 °C. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga–Mn magnetic phases. Mn–N compounds, such as Mn[sub 6]N[sub 2.58] and Mn[sub 3]N[sub 2], decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga–Mn magnetic phases. © 2004 American Institute of Physics.


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