Influence of substrate–film interface engineering on the superconducting properties of YBa[sub 2]Cu[sub 3]O[sub 7-δ]

Rijnders, Guus; Currás, Seve; Huijben, Mark; Blank, Dave H.A.; Rogalla, Horst
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1150
Academic Journal
The atomic stacking sequence at the substrate–film interface plays an essential role in the heteroepitaxial growth of REBa[sub 2]Cu[sub 3]O[sub 7-δ]. During initial growth, the interface configuration influences the surface morphology and structural properties of the film, due to the formation of anti-phase boundaries (APBs) by coalescence of islands with different stacking sequences. In this study, the interface configuration is accurately controlled by both the terminating atomic layer of the SrTiO[sub 3] substrate and the stoichiometry of the first unit cell layer. Using this capability the network of APBs and, therefore, the in-plane ordering is tuned, allowing the study of its influence on the structural and electrical properties of the YBa[sub 2]Cu[sub 3]O[sub 7-δ] film. The critical temperature T[sub c] is depressed by increase of the in-plane ordering, which strongly indicates that the presence of APBs in the sample favors the oxygen in-diffusion. © 2004 American Institute of Physics.


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