Ferroelectric properties of pulsed laser deposited Ba(Zr[sub 0.15]Ti[sub 0.85])O[sub 3] thin films

James, A.R.; Prakash, Chandra
February 2004
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1165
Academic Journal
Thin films of Ba(Zr[sub 0.15]Ti[sub 0.85])O[sub 3] were crystallized in situ at several different oxygen background pressures and temperatures. The optimal temperature and pressure for obtaining films with smooth surface morphology and good electrical properties was found to be 675 °C and 300 mTorr, respectively. Films grown at this temperature were found to have a P[sub r] of 3.31 μC/cm[sup 2] and an E[sub c] of 93.5 kV/cm. Low field dielectric measurements and C-V measurements were performed in order to study the dielectric behavior of the films. A tunability of ∼45% was recorded on the films. © 2004 American Institute of Physics.


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