TITLE

Interfacial characteristics of HfO[sub 2] films grown on strained Si[sub 0.7]Ge[sub 0.3] by atomic-layer deposition

AUTHOR(S)
Cho, M.-H.; Chang, H.S.; Moon, D.W.; Kang, S.K.; Min, B.K.; Ko, D.-H.; Kim, H.S.; McIntyre, Paul C.; Lee, J.H.; Ku, J.H.; Lee, N.I.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interfacial characteristics of gate stack structure of HfO[sub 2] dielectrics on strained Si[sub 0.7]Ge[sub 0.3] deposited by atomic-layer deposition were investigated. An interfacial layer including GeO[sub x] layers was grown on a SiGe substrate, and the thickness of the GeO[sub x] layer at the interfacial layer was decreased after the annealing treatment, while SiO[sub 2] layer was increased. The ∼50-Å-thick HfO[sub 2] film with an amorphous structure was converted into a polycrystalline structure after rapid annealing at temperature of over 700 °C for 5 min. The interfacial silicate layer was effectively suppressed by GeO[sub x] formation, while the silicate layer was formed after the annealing treatment. GeO[sub x] formation in an as-grown film resulted in a decrease in the accumulation capacitance and an increase in the oxide trap charge. © 2004 American Institute of Physics.
ACCESSION #
12202311

 

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