TITLE

Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length

AUTHOR(S)
Allibert, F.; Pretet, J.; Pananakakis, G.; Cristoloveanu, S.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1192
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In short-channel silicon-on-insulator metal–oxide–semiconductor field-effect transistors, the condition for full depletion involves not only the body thickness and doping but also the channel length. The proximity of source and drain junctions reduces the apparent doping seen from the gate, which makes full depletion easier. Therefore, a transistor designed as partially depleted can behave as fully depleted. A simple analytical model for the length-doping transformation is proposed and validated by numerical simulations. © 2004 American Institute of Physics.
ACCESSION #
12202304

 

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