Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation

Carter, S.G.; Ciulin, V.; Sherwin, M.S.; Hanson, M.; Huntington, A.; Coldren, L.A.; Gossard, A.C.
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p840
Academic Journal
A 4-μm-thick sample containing 50 GaAs/AlGaAs asymmetric coupled quantum wells was driven with a strong terahertz (THz) electric field of frequency ω[sub THz] and probed with a near-infrared (NIR) laser of frequency ω[sub NIR]. The THz beam modulated the probe to generate sidebands at ω[sub NIR]+nω[sub THz], where n is an integer. Up to 0.2% of the NIR laser power was converted into the n=+1 sideband at 20 K, and sidebands were observed up to room temperature. The strong THz fields also induced changes in the NIR absorption of the sample. © 2004 American Institute of Physics.


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