Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys

Li, S.F.; Bauer, M.R.; Menéndez, J.; Kouvetakis, J.
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p867
Academic Journal
The compositional dependence of the Ge–Ge Raman mode in SnGe alloys has been measured in samples grown on Si substrates using a chemical vapor deposition technique. The experimental result, Δω(s)=(-68±5)s (where s is the Sn concentration), is in very good agreement with a theoretical prediction from a simple model with parameters adjusted to the compositional dependence of Raman frequencies in GeSi alloys. © 2004 American Institute of Physics.


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