Parametric study on optical properties of digital-alloy In(Ga[sub 1-z]Al[sub z])As/InP grown by molecular-beam epitaxy

Song, J.D.; Heo, D.C.; Han, I.K.; Kim, J.M.; Lee, Y.T.; Park, S.-H.
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p873
Academic Journal
Optical properties of digital-alloy InGaAlAs grown by molecular-beam epitaxy were parametrically investigated by 10-K-photoluminescence (PL) study on (In[sub 0.53]Ga[sub 0.47]As)[sub n]/(In[sub 0.52]Al[sub 0.48]As)[sub n] short-period superlattices (SPSs) in the range of n=1–5 monolayers. Two different peaks are resolved in PL spectra, and the higher energy peak (H) results from an excitonic transition while the lower energy peak (L) is related to a phonon-assisted transition. The H peak energies decrease monotonously as n increases, and it is in good agreement with the band-gap calculation with transfer matrix methods. It is found that two monolayer-period length (n=2) is the optimum one, where the PL intensity is largest and the ratio of L peak to H peak intensity is lowest. The various compositions (z) of digital-alloy In(Ga[sub 1-z]Al[sub z])As are prepared and their optical properties are investigated for z=0.2, 0.4, 0.6, and 0.8. The linewidths of 9-K-PL spectra for various z values are within the range of 10–15 meV, which are comparable to the best analog-alloy InGaAlAs. © 2004 American Institute of Physics.


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