Modeling of Si self-diffusion in SiO[sub 2]: Effect of the Si/SiO[sub 2] interface including time-dependent diffusivity

Uematsu, Masashi; Kageshima, Hiroyuki; Takahashi, Yasuo; Fukatsu, Shigeto; Itoh, Kohei M.; Shiraishi, Kenji; Gösele, Ulrich
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p876
Academic Journal
Self-diffusion of Si in thermally grown SiO[sub 2] is modeled taking into account the effect of SiO molecules generated at the Si/SiO[sub 2] interface and diffusing into SiO[sub 2] to enhance the self-diffusion. Based on the model, a recent self-diffusion experiment of ion-implanted [sup 30]Si in SiO[sub 2], which showed increasing self-diffusivity with decreasing distance between the [sup 30]Si diffusers and Si/SiO[sub 2] interface [Fukatsu et al., Appl. Phys. Lett. 83, 3897 (2003)], was simulated, and the simulated results fit the experimental profiles. Furthermore, the simulation predicts that the self-diffusivity would increase for a longer annealing time because more SiO molecules should be arriving from the interface. Such time-dependent diffusivity was indeed found in our follow-up experiments, and the profiles were also fitted by the simulation using a single set of parameters. © 2004 American Institute of Physics.


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