Optical and structural properties of Si[sub x]Sn[sub y]Ge[sub 1-x-y] alloys

Aella, P.; Cook, C.; Tolle, J.; Zollner, S.; Chizmeshya, A.V.G.; Kouvetakis, J.
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p888
Academic Journal
Single-phase Si[sub x]Sn[sub y]Ge[sub 1-x-y] alloys (x≤0.25,y≤0.11) were grown on Si using chemical vapor deposition. First principles simulations predict that these materials are thermodynamically accessible and yield lattice constants as a function of Si/Sn concentrations in good agreement with experiment. An empirical model derived from experimental Si[sub x]Ge[sub 1-x] and Sn[sub y]Ge[sub 1-y] binary data also provides a quantitative description of the composition dependence of the lattice parameters. Spectroscopic ellipsometry of selected samples yields dielectric functions indicating a band structure consistent with highly crystalline semiconductor materials of diamond symmetry. Incorporation of Si into Sn[sub y]Ge[sub 1-y] leads to an additional reduction of the E[sub 2] critical point, as expected based on the E[sub 2] values of Si and Ge. © 2004 American Institute of Physics.


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