Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi[sub 2]

Terai, Yoshikazu; Maeda, Yoshihito
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p903
Academic Journal
We present photoluminescence (PL) properties of impurity (Al, Mn, Co)-doped β-FeSi[sub 2] produced by ion-beam synthesis. The β-Fe(Si[sub 1-x]Al[sub x])[sub 2] sample showed an increase of both the PL intensity and activation energy (E[sub a]) for a nonradiative recombination path. On the contrary, the β-(Fe[sub 1-x]Mn[sub x])Si[sub 2] and the β-(Fe[sub 1-x]Co[sub x])Si[sub 2] samples reduced the PL intensity and E[sub a]. We found that the doping of Al atoms occupying the Si sites in β-FeSi[sub 2] is effective to enhance the 1.54 μm photoluminescence. © 2004 American Institute of Physics.


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