Low-current blocking temperature writing of double barrier magnetic random access memory cells

Jianguo Wang; Freitas, P.P.
February 2004
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p945
Academic Journal
A magnetic random access memory cell architecture is fabricated where the pinned layer is reversed by heating above a reduced blocking temperature with a current pulse crossing the junction, and cooled under an external applied field (word line), minimizing half-select switching of nonaddressed bits. In order to improve Joule heating and increase breakdown voltage, a double barrier structure was used, with a common antiferromagnetic layer (60 Å MnIr) two pinned 30 Å CoFe layers, and two free layers incorporating nanooxide structures. The blocking temperature was reduced to 120 °C. A TMR of 25% was achieved for both single barrier and double barrier tunnel junctions with resistance×area products of ∼40 Ω×μm[sup 2] and ∼280 Ω×μm[sup 2], respectively. Pinned layer writing allows the definition of a three-state memory, requiring, however, a destructive read out. A significant improvement of writing efficiency is observed with the double barrier structure. A 10 ns current pulse of 9 mA/μm2 is sufficient to heat the double barrier junctions above the blocking temperature and induce pinned layer switching. © 2004 American Institute of Physics.


Related Articles

  • Effect of spatially asymmetric dipolar interactions in the magnetization reversal of closely spaced ferromagnetic nanoisland arrays. Porro, J. M.; Berger, A.; Grimsditch, M.; Metlushko, V.; Ilic, B.; Vavassori, P. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07B913 

    The magnetization reversal process of interacting elongated nanoislands is presented here. The magnetization reversal has been investigated by means of magneto-optical Kerr effect magnetometry, analyzing the beams reflected and diffracted by the array, magnetic force microscopy, and...

  • Low switching current flux-closed magnetoresistive random access memory. Zheng, Y. K.; Wu, Y. H.; Li, K. B.; Qiu, J. J.; Shen, Y. T.; An, L. H.; Guo, Z. B.; Han, G. C.; Luo, P.; You, D.; Liu, Z. Y. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7307 

    A spin valve magnetoresistive random access memory with a flux-closed structure is presented. The flux-closed structure prevents the disruption to magnetization of the recording layer and increases the thermal stability. Simulation results show that the switching field increases under the...

  • Activation barriers of submicron magnetoresistive random access memory cells with single and synthetic antiferromagnet free layers. Injun Hwang; Kwang-Seok Kim; Cho, Y. J.; Kim, K. W.; Taewan Kim // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08T317 

    Thermally activated magnetization reversals of submicron sized magnetic tunnel junctions with NiFe single and NiFe/Ru/NiFe synthetic antiferromagnet (SAF) free layers are investigated by varying the pulse durations and current amplitudes in switching pulse measurements. The measured data show...

  • Ultrafast bit addressing in a magnetic memory matrix. Schumacher, H. W. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033910 

    An ultrafast bit addressing scheme for magnetic random access memories (MRAMs) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by subnanosecond field pulses making use of the magnetization precession of the free layer. Single-spin...

  • Transition between onion states and vortex states in exchange-coupled Ni–Fe/Mn–Ir asymmetric ring dots. Sasaki, Isao; Nakatani, Ryoichi; Endo, Yasushi; Kawamura, Yoshio; Yamamoto, Masahiko; Takenaga, Takashi; Aya, Sunao; Kuroiwa, Takeharu; Beysen, Sadeh; Kobayashi, Hiroshi // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08G303 

    The transition between onion states and vortex states in exchange-coupled Ni–Fe/Mn–Ir asymmetric ring dots has been investigated. A direction of domain wall motion, during the transition from the single-domain state to the vortex state via the onion state, depends on a sweep...

  • Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions. Yiming Huai; Albert, Frank; Nguyen, Paul; Pakala, Mahendra; Valet, Thierry // Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3118 

    The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1×0.2 μm2 and resistance–area product RA in the range of 0.5–10 Ω μm2 (ΔR/R=1%–20%). Current-induced magnetization switching...

  • Giant anisotropic magneto-resistance in ferromagnetic atomic contacts. Viret, M.; Gabureac, M.; Ott, F.; Fermon, C.; Barreteau, C.; Autes, G.; Guirado-Lopez, R. // European Physical Journal B -- Condensed Matter;May2006, Vol. 51 Issue 1, p1 

    Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As dimensions are reduced below some important length scales for magnetism and electrical...

  • Single ferromagnetic layer magnetic random access memory. Xing, M.-J.; Jalil, M. B. A.; Ghee Tan, Seng; Jiang, Y. // Journal of Applied Physics;Aug2013, Vol. 114 Issue 8, p084306 

    We propose a magnetic random access memory (MRAM) device in which both the writing and reading processes are realized within a single ferromagnetic (FM) layer. The FM layer is sandwiched between layers of heavy element and oxide to enhance the Rashba spin-orbit coupling (RSOC). When the in-plane...

  • Precessional reversal in exchange-coupled composite magnetic elements. Livshitz, Boris; Inomata, Akihiro; Neal Bertram, H.; Lomakin, Vitaliy // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p182502 

    Magnetization reversal in composite exchange-coupled dual-layer magnetic elements can occur in the regime of precessional reversal. Compared to the regime of damping reversal in composite elements, the regime of precessional reversal exhibits substantially reduced reversal fields with modified...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics