TITLE

In situ electrochemical fabrication of natural contacts on single nanowires

AUTHOR(S)
Wenhao Wu; DiMaria, J.B.; Yoo, Han G.; Pan, Shanlin; Rothberg, L.J.; Yong Zhang
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p966
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a template-based in situ electrochemical method for fabricating natural electric contacts on single nanowires using a pair of cross-patterned electrodes. Such electric contacts are highly stable upon thermal cycling between room temperature and milli-Kelvin temperatures. Direct imaging of the single-nanowire contacts using scanning electron microscopy is also demonstrated. © 2004 American Institute of Physics.
ACCESSION #
12141821

 

Related Articles

  • Contact phenomena in nanowire arrays. Ruda, H. E.; Shik, A. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1030 

    The capacitance–voltage characteristic C(V) of an array of semiconductor nanowires perpendicular to a bulk metallic electrode is considered theoretically. For sufficiently high doping ν0 of nanowires, C(V) is shown to differ dramatically from that of a bulk sample having a strong...

  • Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes. Hwang, J. S.; Ahn, D.; Hong, S. H.; Kim, H. K.; Hwang, S. W.; Jeon, B.-H.; Chol, J.-H. // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1636 

    We demonstrate the effect of Ti thickness on the contact resistance between GaN nanowires and Ti/Au electrodes. We have carried out systematic characterization of many GaN nanowires contacted by various Ti/Au electrodes. We conclude that the average resistance is reduced by almost six orders of...

  • An electrostatic model of split-gate quantum wires. Sun, Yinlong; Kirczenow, George; Sachrajda, Andrew S.; Feng, Yan // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6361 

    Presents a study which developed an electrostatic model of split-gate quantum wires that are fabricated from gallium arsenide-aluminum gallium arsenide heterostructures. Basic physical features of quantum wires; Investigation of ionization regimes of quantum wires; Calculation of the pinch off...

  • Charge transmission through a molecular wire: The role of terminal sites for the current-voltage behavior. Petrov, E. G.; Zelinskyy, Ya. R.; May, V.; Hänggi, P. // Journal of Chemical Physics;8/28/2007, Vol. 127 Issue 8, p084709 

    The current-voltage and the conductance-voltage characteristics are analyzed for a particular type of molecular wire embedded between two electrodes. The wire is characterized by internal molecular units where the lowest occupied molecular orbital (LUMO) levels are positioned much above the...

  • Silicon and nickel combine to make conductive nanowires.  // Advanced Materials & Processes;Sep2004, Vol. 162 Issue 9, p18 

    Reports on the combining of silicon and nickel to make conductive nanowires for computer circuits. Specifications; Applications; Contact information.

  • Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction. Sun, H.; Zhang, Q.; Zhang, J.; Deng, T.; Wu, J. // Applied Physics B: Lasers & Optics;Mar2008, Vol. 90 Issue 3/4, p543 

    ZnO homojunction light-emitting diodes based on ZnO nanowires were fabricated on Si(100) substrates. An N–In codoped p-type ZnO film grown by ultrasonic spray pyrolysis and an unintentionally doped n-type ZnO nanowire quasi-array grown by an easy low-temperature hydrothermal method were...

  • Size-dependent lattice parameters of microstructure-controlled Sn nanowires. Ho Sun Shin; Jin Yu; Jae Yong Song; Hyun Min Park // Journal of Materials Research;8/28/2011, Vol. 26 Issue 16, p2033 

    The size dependence of the lattice parameter of nanosolids has extensively been studied because lattice strain engineering is important in controlling the physical properties of nanowires (NWs), such as band gap, carrier transport, mechanical strength, etc. We have investigated the...

  • Liquid droplet dynamics and complex morphologies in vapor-liquid-solid nanowire growth. Schwalbach, E. J.; Davis, S. H.; Voorhees, P. W.; Wheeler, D.; Warren, J. A. // Journal of Materials Research;9/14/2011, Vol. 26 Issue 17, p2186 

    The morphology of semiconducting nanowires, including kinked and branched wires, must be controlled in order to produce functional devices. Here, we describe some of the experimental and theoretical work involving complex morphologies of Au-catalyzed Si nanowires grown using the...

  • Effect of surface bonding on semiconductor nanoribbon wiggling structure. Yu Zhang; Minrui Yu; Savage, Donald E.; Lagally, Max G.; Blick, Robert H.; Feng Liu // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p111904 

    SiGe nanomembranes and nanowires provide one important class of stretchable electronic materials. We have investigated a very interesting wiggling phenomenon of SiGe nanoribbons bonded to Si substrate as experimentally observed in a Hall-bar structure. Based on continuum linear stability...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics