TITLE

Improving organic transistor performance with Schottky contacts

AUTHOR(S)
Schroeder, Raoul; Majewski, Leszek A.; Grell, Martin
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p1004
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organic field-effect transistors (OFETs) with non-Ohmic contacts, e.g., pentacene with gold electrodes, exhibit a linearly growing threshold voltage with increased film thickness due to tunnel injection [R. Schroeder et al., Appl. Phys. Lett. 83, 3201 (2003)]. In this letter, we demonstrate gold/pentacene OFETs with a low threshold voltage independent of pentacene thickness. By doping the pentacene in the contact area with FeCl[sub 3] (iron-III-chloride), the metal-insulator-type tunneling barrier was changed to a metal-semiconductor Schottky barrier. Since the injection through a Schottky barrier depends on the potential and not on the electric field, the threshold voltage is no longer a function of the semiconductor thickness. Through selective doping of the area under the electrode, the channel remains undoped, and large on/off ratios are retained. © 2004 American Institute of Physics.
ACCESSION #
12141808

 

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