TITLE

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

AUTHOR(S)
Gudina, S.; Arapov, Yu.; Saveliev, A.; Neverov, V.; Podgornykh, S.; Shelushinina, N.; Yakunin, M.; Vasil'evskii, I.; Vinichenko, A.
PUB. DATE
December 2016
SOURCE
Semiconductors;Dec2016, Vol. 50 Issue 12, p1641
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8-30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
ACCESSION #
120842656

 

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