TITLE

Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In[sub 0.46]Ga[sub 0.54]P quantum wells

AUTHOR(S)
Walter, G.; Elkow, J.; Holonyak, N.; Jr.; Heller, R. D.; Zhang, X. B.; Dupuis, R. D.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p666
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Å wide tensile-strained In[sub 0.46]Ga[sub 0.54]P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T[sub 0] of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C. © 2004 American Institute of Physics.
ACCESSION #
12063236

 

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