Enhanced thermal stability of high-dielectric Gd[sub 2]O[sub 3] films using ZrO[sub 2] incorporation

Cho, M.-H.; Moon, D. W.; Park, S. A.; Rho, Y. S.; Kim, Y. K.; Jeong, K.; Chang, C. H.; Gu, J. H.; Lee, J. H.; Choi, S. Y.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p678
Academic Journal
The thermal stability of Gd[sub 2]O[sub 3] films, containing added Zr, was investigated using various techniques. The structural characteristics of epitaxial Gd[sub 2]O[sub 3] are maintained on the Si(111) substrate when the Zr is codeposited along with Gd. The incorporation of ZrO[sub 2] into Gd[sub 2]O[sub 3] improves the crystallinity of the film and no interfacial layers were observed. In particular, the structural stability with no deformation is greatly enhanced, and silicate formation is drastically suppressed, up to an annealing temperature of 800 °C. The interfacial defects caused by extensive interactions between Gd and Si are also minimized. © 2004 American Institute of Physics.


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