GaN quantum dot density control by rf-plasma molecular beam epitaxy

Brown; Wu, F.; Petroff, P. M.; Speck, J. S.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p690
Academic Journal
We report on the growth of GaN quantum dots and the control of their density in the Stranski–Krastanov mode on AlN (0001) by rf-plasma molecular beam epitaxy at 750 °C. After depositing the equivalent of 2–3 ML GaN coverage, as limited by N fluence under Ga-droplet growth conditions, excess Ga was desorbed and Stranski–Krastanov islands formed under vacuum. We present the dependence of island density as a function of GaN coverage (for two growth rates: 0.10 and 0.23 ML/s), as estimated from atomic force microscopy and cross-sectional transmission electron microscopy. With a GaN growth rate of 0.23 ML/s, the island density was found to vary from less than 3.0×10[sup 8]–9.2×10[sup 10] cm[sup -2] as the GaN coverage was varied from 2.2 (critical thickness) to 3.0 ML. For a GaN growth rate of 0.10 ML/s, the island density varied from 2.0×10[sup 10] to 7.0×10[sup 10] cm[sup -2] over a GaN coverage range of 2.0–3.0 ML. For each growth rate, the GaN islands were found to be of nearly uniform size, independent of the quantum dot density. © 2004 American Institute of Physics.


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