TITLE

Wurtzite to zinc-blende phase transition in gallium nitride thin films

AUTHOR(S)
Kim, Joo Han; Holloway, Paul H.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The phase transition in gallium nitride (GaN) thin films at room temperature from the thermodynamically stable wurtzite to the metastable zinc-blende structure is studied. The GaN films were grown at room temperature on (100)-oriented silicon substrates by radio-frequency planar magnetron sputtering of a GaN target in pure nitrogen atmosphere. As the nitrogen gas pressure during the film growth is decreased from 30 to 10 mTorr, the crystalline phase of GaN films changed from a hexagonal wurtzite to a cubic zinc-blende structure with (111) crystallographic planes oriented preferentially parallel to the film surface. The mechanisms responsible for the formation of the nonequilibrium cubic zinc-blende GaN phase at room temperature are suggested, in which the impact of the hyperthermal species impinging on the surface of growing films plays a key role in stabilizing the zinc-blende phase of GaN. © 2004 American Institute of Physics.
ACCESSION #
12063221

 

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