Molecular dynamics study of dislocation formation in a [001] face-centered-cubic epitaxial island under tensile stress

Liu, P.; Zhang, Y. W.; Fox, B.; Lu, C.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p714
Academic Journal
Dislocation formation in homoepitaxial pyramidal [001] Cu islands under tensile stress is studied using molecular dynamics simulations. It is found that 90° Shockley partial dislocations are dominant in the island strain relaxation. For a low-aspect-ratio island, the dislocations are nucleated from the island surface and propagate downwards to form misfit dislocations. For a high-aspect-ratio island, a pair of the dislocations on the same slip plane are simultaneously nucleated respectively from the two island edges, propagate inwards, and react to form a 90° Shockley misfit partial dislocation. These dislocations can form sequentially and cooperatively. © 2004 American Institute of Physics.


Related Articles

  • Simulation of the Dynamics of a Two-Dimensional Dislocation—Disclination Ensemble. Mikaelyan, K. N.; Seefeldt, M.; Gutkin, M. Yu.; Klimanek, P.; Romanov, A. E. // Physics of the Solid State;Nov2003, Vol. 45 Issue 11, p2104 

    A computer code for simulating the dynamics of an arbitrary 2D dislocation–disclination ensemble is developed. The code is constructed according to the molecular-dynamics principles; individual interacting particles are taken to be edge dislocations and dipoles of partial wedge...

  • Atomistic deformation mechanisms in twinned copper nanospheres. Bian, Jianjun; Niu, Xinrui; Zhang, Hao; Wang, Gangfeng // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    In the present study, we perform molecular dynamic simulations to investigate the compression response and atomistic deformation mechanisms of twinned nanospheres. The relationship between load and compression depth is calculated for various twin spacing and loading directions. Then, the overall...

  • Tension-compression asymmetry in homogeneous dislocation nucleation in single crystal copper. Tschopp, M. A.; McDowell, D. L. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121916 

    This letter addresses the dependence of homogeneous dislocation nucleation on the crystallographic orientation of pure copper under uniaxial tension and compression. Molecular dynamics simulation results with an embedded-atom method potential show that the stress required for homogeneous...

  • Accelerating dislocations to transonic and supersonic speeds in anisotropic metals. Tsuzuki, Helio; Branicio, Paulo S.; Rino, José Pedro // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p191109 

    The dynamics of stress-accelerated dislocations in copper is investigated using molecular dynamics simulations. The structure and motion of dissociated edge dislocations are analyzed using the common neighborhood parameter and local stresses. Dislocations are accelerated by high shear stresses...

  • Formation of fivefold deformation twins in nanocrystalline face-centered-cubic copper based on molecular dynamics simulations. Cao, A. J.; Wei, Y. G. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p041919 

    Fivefold deformation twins were reported recently to be observed in the experiment of the nanocrystalline face-centered-cubic metals and alloys. However, they were not predicted previously based on the molecular dynamics (MD) simulations and the reason was thought to be a uniaxial tension...

  • The role of partial grain boundary dislocations in grain boundary sliding and coupled grain boundary motion. Monk, Joshua; Hyde, Brian; Farkas, Diana // Journal of Materials Science;Dec2006, Vol. 41 Issue 23, p7741 

    We study the process of grain boundary sliding through the motion of grain boundary dislocations, utilizing molecular dynamics and embedded atom method (EAM) interatomic potentials. For a Σ = 5 [001]{310} symmetrical tilt boundary in bcc Fe, the sliding process was found to occur through the...

  • Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing. Lévêque, P.; Mathiot, D.; Christensen, J. S.; Svensson, B. G.; Larsen, A. Nylandsted // Journal of Applied Physics;4/1/2006, Vol. 99 Issue 7, p073506 

    Silicon samples containing a sequence of boron spikes grown by molecular beam epitaxy have been used in this work. Point defects were introduced near the surface by means of room temperature silicon implantation. The ion profile was confined between the surface and the first boron spike. The...

  • The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism. Wang, Yi; Ruterana, P.; Kret, S.; El Kazzi, S.; Desplanque, L.; Wallart, X. // Applied Physics Letters;2/4/2013, Vol. 102 Issue 5, p052102 

    The misfit and threading dislocations during GaSb epitaxy on GaAs substrate were investigated by weak beam dark field and high angle dark field scanning transmission electron microscopy. The geometric phase analysis and dislocation density tensor analysis were next used to analyze the strain...

  • Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon. Carmody, M.; Edwall, D.; Ellsworth, J.; Arias, J.; Groenert, M.; Jacobs, R.; Almeida, L. A.; Dinan, J. H.; Chen, Y.; Brill, G; Dhar, N. K. // Journal of Electronic Materials;Aug2007, Vol. 36 Issue 8, p1098 

    It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μe) and minority carrier lifetime (τ), are qualitatively comparable to those reported for LWIR HgCdTe grown on bulk CdZnTe...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics