TITLE

Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

AUTHOR(S)
Zheng, W. M.; Halsall, M. P.; Harmer, P.; Harrison, P.; Steer, M. J.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p735
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the effect of confinement on the shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells with well widths ranging from 30 to 200 Å. A series of Be δ-doped GaAs/AlAs multiple-quantum wells with doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. Photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. Two-hole transitions of the acceptor-bound exciton from the ground state, 1S[sub 3/2](Γ[sub 6]), to the excited state, 2S[sub 3/2](Γ[sub 6]), were clearly observed. It is found that the acceptor transition energy increases with a decrease in quantum well width. © 2004 American Institute of Physics.
ACCESSION #
12063213

 

Related Articles

  • Optical investigation of strain in Si-doped GaN films. Sánchez-Páramo, J.; Calleja, J. M.; Sánchez-García, M. A.; Calleja, E. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4124 

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E[sub 2] mode...

  • Resonance effects in Raman scattering from InAs/AlSb quantum wells. Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p82 

    Investigates GaSb-capped AlSb/InAs/AlSb quantum wells using resonant Raman scattering. Growth of the quantum wells by molecular beam epitaxy; Oxidation of the underlying Aluminum antimonide; Formation of indium antimonide-like interfaces.

  • Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement. Kudrawiec, R.; Gladysiewicz, M.; Misiewicz, J.; Korpijärvi, V.-M.; Pakarinen, J.; Puustinen, J.; Laukkanen, P.; Laakso, A.; Guina, M.; Dumitrescu, M.; Pessa, M. // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p021902 

    Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped...

  • Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs. Konnov, V. M.; Loiko, N. N.; Sadof�ev, Yu. G.; Trushin, A. S.; Makhov, E. I. // Semiconductors;Nov2002, Vol. 36 Issue 11, p1215 

    Layers of Yb-doped ZnTe were grown by molecular-beam epitaxy, and the photoluminescence of ZnTe:Yb structures was studied. It was found that additional doping with O should be performed to activate emission from Yb ions. The necessary conditions for intense emission from Yb[SUP3+] ions were...

  • Graduated heterojunction in GaAs/AlAs quantum wells. Proctor, M.; Oelgart, G.; Rhan, H.; Reinhart, F.-K. // Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3154 

    Examines the GaAs/AlAs multiple quantum wells grown by molecular beam epitaxy. Use of x-ray diffraction, photoluminescence excitation and emission; Generation of the well width and period fluctuation of multiple quantum wells; Transition energies of excitonic transitions.

  • Molecular beam epitaxial growth of ultrathin CdTe-CdMnTe quantum wells and their characterization. Waag, A.; Schmeusser, S.; Bicknell-Tassius, R.N.; Yakovlev, D.R.; Ossau, W.; Landwehr, G.; Uraltsev, I.N. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2995 

    Reports the molecular beam epitaxial growth and optical characterization of CdTe/CdMnTe single quantum wells. Exhibition of narrow photoluminescence lines; Derivation of the structure of the CdTe/CdMnTe interfaces; Identification of two-dimensional free exciton magnetic polarons.

  • Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy. Hafich, M. J.; Lee, H. Y.; Robinson, G. Y.; Li, D.; Otsuka, N. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p752 

    Describes the single quantum-well (SQW) structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy (MBE). Conditions for MBE growth; Photoluminescence of SQW; Significance of the multiple quantum well structures to contemporary optoelectronic devices.

  • Characterization of high-quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques. Pamulapati, J.; Bhattacharya, P.; Tober, R. L.; Loehr, J. P.; Singh, J. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4487 

    Presents a study which investigated the optical properties of high quality In[subx[Ga[sub1] - [subx]As/GaAs single quantum wells. Theoretical considerations; Experimental techniques in molecular beam epitaxial growth; Results of measurements on the photoluminescence spectra from single quantum...

  • Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of... Lakshmi, B.; Robinson, B.J. // Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3616 

    Studies InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy using room-temperature, polarization-resolved photoluminescence from a (001) surface. Degree of polarization of photoluminescence as a direct measure of the anisotropy of polarization of luminescence.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics