Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

Zheng, W. M.; Halsall, M. P.; Harmer, P.; Harrison, P.; Steer, M. J.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p735
Academic Journal
We have investigated the effect of confinement on the shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells with well widths ranging from 30 to 200 Å. A series of Be δ-doped GaAs/AlAs multiple-quantum wells with doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. Photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. Two-hole transitions of the acceptor-bound exciton from the ground state, 1S[sub 3/2](Γ[sub 6]), to the excited state, 2S[sub 3/2](Γ[sub 6]), were clearly observed. It is found that the acceptor transition energy increases with a decrease in quantum well width. © 2004 American Institute of Physics.


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