TITLE

Optically detected heavy- and light-hole anti-crossing in GaAs quantum wells under pulsed magnetic fields

AUTHOR(S)
Yongmin Kim; Lee, Kyu-Seok; Perry, C. H.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p738
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report magneto-photoluminescence studies of two undoped GaAs–Al[sub 0.3]Ga[sub 0.7]As single quantum well (SQW) samples (120 and 60 Å) in pulsed magnetic fields up to ∼65 T. Both samples exhibit exciton transitions due to the ground-state (1s) electron-heavy-hole recombination which undergoes diamagnetic energy shifts at low fields and has a liner dependence at high fields. The 120 Å SQW shows the electron-light-hole exciton transition at zero magnetic field. However at about 30 T, the electron-heavy-hole and the electron-light-hole transitions intersect and show an anti-crossing behavior. The 60 Å SQW shows a similar behavior but the splitting between the heavy- and light-hole excitons can only be observed in the anti-crossing region at about 35 T. The results indicate that the valence band mixing plays a significant role at high magnetic fields. © 2004 American Institute of Physics.
ACCESSION #
12063212

 

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